This course can also be taken for academic credit as ECEA 5632, part of CU Boulder’s Master of Science in Electrical Engineering degree.
Transistor - Field Effect Transistor and Bipolar Junction Transistor
Transistor - Field Effect Transistor and Bipolar Junction Transistor
This course is part of Semiconductor Devices Specialization
Instructor: Wounjhang Park
12,285 already enrolled
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Gain insight into a topic and learn the fundamentals.
4.2
(83 reviews)
Advanced level
Designed for those already in the industry
Flexible schedule
Approx. 12 hours
Learn at your own pace
Build toward a degree
What you'll learn
Describe and analyze metal-oxide-semiconductor (MOS) device
Describe and analyze MOS field effect transistor (MOSFET)
Describe and analyze bipolar junction transistor (BJT)
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Assessments
3 quizzes
Taught in English
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This course is part of the Semiconductor Devices Specialization
When you enroll in this course, you'll also be enrolled in this Specialization.
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There are 3 modules in this course
In this module on MOS devices, we will cover the following topics:, MOS device structure, energy band diagram for MOS device at equilibrium, Flat band condition, Accumulation, Depletion, and Inversion of MOS under bias, Energy band diagram and charge distribution for MOS in inversion, Quantitative model and relevant parameters, Energy band diagram with channel bias, Inversion layer charge, and Effect on threshold voltage of MOS in non-equilibrium, C-V characteristics: Charge distribution under different biasing conditions, C-V characteristics: Frequency dependence, Effects of oxide charge on flat band and threshold voltages in non-ideal MOS, and Types of oxide charge in non-ideal MOS.
What's included
8 videos4 readings1 quiz1 discussion prompt
In this module on MOSFETs (metal-oxide semiconductor field effect transistors), we cover the following topics: History of development of MOSFETs, Device structure, Device types, Circuit symbols, Long channel theory, I-V characteristics, Modes of operation, Channel length modulation, Body bias effect, Bulk charge effect, Sub-threshold conduction, Source/drain charge sharing in short channel devices, Drain induced barrier lowering, Subsurface punchthrough, Mobility degradation, Velocity saturation, Drain current saturation, Scaling of drain current with channel length, and Scaling of speed with channel length.
What's included
7 videos3 readings1 quiz
In this module on BJTs (bipolar junction transistors), we will cover the following topics: BJT Device structures, Energy band diagrams, Active bias, Leakage current, Recombination in base, Hoe injection, Non-uniform doping in base, Current gain, Switching with BJT, Single heterojunction bipolar transistor, Double heterojunction bipolar transistor, Non-uniform material, Early effect, Emitter bias dependence, High-level injection, Base, emitter and collector transit times, and RC time constant.
What's included
6 videos3 readings1 quiz1 peer review
Instructor
Instructor ratings
4.5 (10 ratings)Offered by
Recommended if you're interested in Electrical Engineering
University of Colorado Boulder
Korea Advanced Institute of Science and Technology(KAIST)
University of Colorado Boulder
Columbia University
Build toward a degree
This course is part of the following degree program(s) offered by University of Colorado Boulder. If you are admitted and enroll, your completed coursework may count toward your degree learning and your progress can transfer with you.¹
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Frequently asked questions
Access to lectures and assignments depends on your type of enrollment. If you take a course in audit mode, you will be able to see most course materials for free. To access graded assignments and to earn a Certificate, you will need to purchase the Certificate experience, during or after your audit. If you don't see the audit option:
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